RESEARCH ARTICLE


Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction



Xiong Chao*, 1, 2, Chen Lei1, Yuan Hongchun1
1 School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu 213002, China
2 School of Electronic and Information Engineering, South China University of Technology, Guangzhou, Guangdong 510641, China


Article Metrics

CrossRef Citations:
0
Total Statistics:

Full-Text HTML Views: 115
Abstract HTML Views: 544
PDF Downloads: 307
Total Views/Downloads: 966
Unique Statistics:

Full-Text HTML Views: 83
Abstract HTML Views: 383
PDF Downloads: 222
Total Views/Downloads: 688



© 2013 Chao et al;

open-access license: This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 International Public License (CC-BY 4.0), a copy of which is available at: https://creativecommons.org/licenses/by/4.0/legalcode. This license permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

* Address correspondence to this author at the School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu 213002, China; Tel:086+13656142469; Fax: :086+51985212952; E-mail: xiongchaoxc88@163.com


Abstract

The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

Keywords: Heterojunction diode, p-CuSCN/n-Si, the current transport mechanism.