Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs
Xiaofei Jia1, *, Liang He2
Identifiers and Pagination:Year: 2017
First Page: 38
Last Page: 46
Publisher Id: TOMSJ-11-38
Article History:Received Date: 06/03/2017
Revision Received Date: 21/06/2017
Acceptance Date: 30/07/2017
Electronic publication date: 22/09/2017
Collection year: 2017
open-access license: This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 International Public License (CC-BY 4.0), a copy of which is available at: (https://creativecommons.org/licenses/by/4.0/legalcode). This license permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Objective and Method:
In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.
The result we obtained which considered the combination of the two effects is in good agreement with experimental studies in the research papers, thus getting a theoretical explanation for the variation of the suppression factor with the bias voltage. Meanwhile, the suppression factor model is suitable for nano-MOSFET.