RESEARCH ARTICLE


Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs



Xiaofei Jia1, *, Liang He2
1 College of Electronic and Information Engineering, Ankang University, AnKang 725000, P.R. China
2 Advanced Materials and Nano Technology School, Xidian University, Xi’an 710071, P.R. China


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© 2017 Jia and He.

open-access license: This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 International Public License (CC-BY 4.0), a copy of which is available at: (https://creativecommons.org/licenses/by/4.0/legalcode). This license permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

* Address correspondence to this author at the College of Electronic and Information Engineering, Ankang University, AnKang 725000, P.R. China; Tel: ????????; E-mail: jiaxiaofei-ab@163.com


Abstract

Objective and Method:

In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.

Result:

The result we obtained which considered the combination of the two effects is in good agreement with experimental studies in the research papers, thus getting a theoretical explanation for the variation of the suppression factor with the bias voltage. Meanwhile, the suppression factor model is suitable for nano-MOSFET.

Keywords: Nano-MOSFET, Fano, Ballistic transport, Shot noise, Carrier transport, Quasi-ballistic.